Method of forming patterned thin film and method of fabricating micro device
AssigneeTDK Corporation
InventorsAkifumi Kamijima, Yoichi Ishida, Koichi Terunuma
Life of this patent
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Abstract
In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film to be patterned. Next, a second film is formed over an entire surface on top of the film to be patterned and the first film. Then, by removing the first film, an etching mask is obtained from the second film formed on the film to be patterned. The film to be patterned is selectively etched through dry etching using the etching mask. A patterned thin film having a groove is thereby obtained.
Claims12
A method of forming a patterned thin film, comprising the steps of:
- forming a film to be patterned on a base layer;
- forming a patterned first film on the film to be patterned;
- forming a second film over an entire surface on top of the film to be patterned and the first film;
- obtaining an etching mask from the second film formed on the film to be patterned, by removing the first film;
- and
- forming a patterned thin film by selectively etching the film to be patterned, through dry etching using the etching mask.
A method of fabricating a micro device including one or more patterned thin films, comprising the steps of:
- forming a film to be patterned on a base layer;
- forming a patterned first film on the film to be patterned;
- forming a second film over an entire surface on top of the film to be patterned and the first film;
- obtaining an etching mask from the second film formed on the film to be patterned, by removing the first film;
- and
- forming a patterned thin film by selectively etching the film to be patterned, through dry etching using the etching mask.
Dependencies are inferred from the claim text.