Sputtering apparatus and film forming method
AssigneeAnelva Corporation
InventorsKenji Okatani, Satoshi Yamada, Yoshiro Hasegawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeAnelva Corporation
InventorsKenji Okatani, Satoshi Yamada, Yoshiro Hasegawa
Estimating the term…
The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.
A sputtering apparatus comprising;
A thin film forming method comprising;
A thin film forming method comprising;
Dependencies are inferred from the claim text.