Boron-containing polishing system and method

A chemical-mechanical polishing system comprising:

• (a) an abrasive and/or polishing pad,
• (b) an aqueous carrier, and
• (c) a water-soluble boron-containing compound that is not boric acid, or salt thereof, formula I-VII:
• 2
• wherein,
• R1, R2, R3, R5, R6, R9, R14, R18, R19, R22, R23, and R24 are independently selected from the group consisting of H, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl,
• R4, R7, R8, R10 R11, R12, R13, R15, R16, R17, R20, R21, and R25are independently selected from the group consisting of H, halide, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl,
• any two R substituents of a formula can be linked through 1-16 atoms selected from the group consisting of C, N, O, and S to form a cyclic ring, and
• R1-R25 are optionally substituted with 1-5 substituents independently selected from the group consisting of halide, C1-20 alkyl, C1-20 alkoxy, thio(C1-20)alkyl, C6-30 aryl including polycyclic aryl, C6-30 ar(C1-20)alkyl, C6-30 ar(C1-20)alkoxy, thio(C6-30)aryl, cyclo(C1-20)alkyl, cyclo(C3-20)alkyloxy, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, heterocyclo(C3-20)alkyloxy, C2-20 alkenyl, C2-20 alkynyl, B(OH)(C1-20 alkyl), B(OH)(cyclo(C1-20)alkyl), B(OH)(C6-30 aryl), B(OH)(C6-30 heteroaryl), B(OH)2, thiol, hydroxy, halo(C1-20)alkyl, halo(C1-20)alkoxy, nitro, amino, C1-20 alkylamino, di(C1-20)alkylamino, amino(C1-20)alkyl, C1-20alkylamino(C1-20)alkyl, nitrile, cyano, carbonyl, C1-20 alkylcarbonyl, carboxy, carboxy(C1-20)alkyl, silyl, and siloxy.

A method of polishing a substrate comprising:

• (i) contacting a substrate with a chemical-mechanical polishing system comprising:
• (a) an abrasive and/or polishing pad,
• (b) boric acid, or conjugate base thereof, and
• (c) an aqueous carrier,
• wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, and
• (ii) abrading at least a portion of the substrate to polish the substrate.

A method of polishing a substrate comprising:

• (i) contacting a substrate with a chemical-mechanical polishing system comprising:
• (a) an abrasive and/or polishing pad,
• (b) an aqueous carrier, and
• (c) a water-soluble boron-containing compound that is not boric acid, or salt thereof, of formula I-VII:
• 3
• wherein,
• R1, R2, R3, R5, R6, R9, R14, R18, R19, R22, R23, and R24 are independently selected from the group consisting of H, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl,
• R4, R7, R8, R10, R11, R12, R13, R15, R16, R17, R20, R21, and R25are independently selected from the group consisting of H, halide, C1-20 alkyl, C6-30 aryl including polycyclic aryl, cyclo(C3-20)alkyl, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, C2-20 alkenyl, and C2-20 alkynyl,
• any two R substituents of a formula can be linked through 1-16 atoms selected from the group consisting of C, N, O, and S to form a cyclic ring, and
• R1- R25 are optionally substituted with 1-5 substituents independently selected from the group consisting of halide, C1-20 alkyl, C1-20 alkoxy, thio(C1-20)alkyl, C6-30 aryl including polycyclic aryl, C6-30 ar(C1-20)alkyl, C6-30 ar(C1-20)alkoxy, thio(C6-30)aryl, cyclo(C1-20)alkyl, cyclo(C3-20)alkyloxy, hetero(C6-30)aryl including polycyclic heteroaryl, C3-20 heterocyclyl, heterocyclo(C3-20)alkyloxy, C2-20 alkenyl, C2-20 alkynyl, B(OH)(C1-20 alkyl), B(OH)(cyclo(C1-20)alkyl), B(OH)(C6-30 aryl), B(OH)(C6-30 heteroaryl), B(OH)2, thiol, hydroxy, halo(C1-20)alkyl, halo(C1-20)alkoxy, nitro, amino, C1-20 alkylamino, di(C1-20)alkylamino, amino(C1-20)alkyl, C1-20alkylamino(C1-20)alkyl, nitrile, cyano, carbonyl, C1-20 alkylcarbonyl, carboxy, carboxy(C1-20)alkyl, silyl, and siloxy, and
• (ii) abrading at least a portion of the substrate to polish the substrate.