Simplified method to produce nanoporous silicon-based films

Abstract

An improved nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with novel processes for producing these improved films. The improved films are produced by a process that includes (a) preparing a silicon-based, precursor composition including a porogen, (b) coating a substrate with the silicon-based precursor to form a film, (c) aging or condensing the film in the presence of water, (d) heating the gelled film at a temperature and for a duration effective to remove substantially all of said porogen, and wherein the applied precursor composition is substantially aged or condensed in the presence of water in liquid or vapor form, without the application of external heat or exposure to external catalyst.

Dependencies are inferred from the claim text.