Method for forming a refractory-metal-silicide layer in a semiconductor device
AssigneeNEC Corporation
InventorsNOBUAKI HAMANAKA, KEN INOUE, KAORU MIKAGI
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Abstract
A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts for prevention of refractory-metal-silicification of diffused regions between the steps of implanting impurities to form an impurity-implanted region and annealing for refractory-metal-silicification of the diffused layer. The refractory-metal-silicification of the diffused regions proceeds smoothly to thereby prevent degradation of the initial gate withstand voltage and a higher sheet resistance.
Claims12
A method for forming a silicide of a metal with high-melting-point in a semiconductor device comprising the steps of:
- implanting impurity ions into a silicon substrate to form an impurity-implanted region;
- heat-treating the silicon substrate to form an oxide layer on top of the impurity-implanted region;
- etching the oxide layer for removal thereof by using a basic oxidant solution;
- heat-treating the impurity-implanted region to diffuse the impurity ions to form an impurity-diffused region from the impurity-implanted region;
- depositing a metal with high-melting-point to form a metal layer on the impurity-diffused region;
- and
- heat-treating the metal layer for refractory-metal-silicification of the impurity-diffused region.
A method for forming a silicide of a metal with high-melting-point in a semiconductor device comprising the steps of:
- implanting impurity ions into a silicon substrate to form an impurity-implanted region;
- heat-treating the impurity-implanted region to diffuse the impurity ions to form an impurity-diffused region from the impurity-implanted region;
- etching a top of the impurity-diffused region for removal thereof by using a basic oxidant solution;
- depositing a metal with high-melting-point to form a metal layer on the impurity-diffused region;
- and
- heat-treating the metal layer for refractory-metal-silicification of the diffused region.
Dependencies are inferred from the claim text.