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US 2003/0077883 A1Published application
Deposition method, deposition apparatus, and semiconductor device
OwnerNaoto Ohtakeinventor
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Abstract
To provide a deposition method and a deposition apparatus, in which deposition can be performed under a low temperature and a substrate does not suffer from charge-up damage, and a semiconductor device produced thereby. The deposition method is that reactive gas is made to pass through communication holes and guided toward downstream of the communication holes after the gas is exposed to surface wave of microwave, and it is reacted with silicon compound gas to deposit a silicon-containing film on a substrate arranged in the downstream.
Claims25
A deposition method comprising:
- after exposing a reactive gas to a surface wave of a microwave, guiding the reactive gas to a downstream of a communication hole by making the reactive gas to pass through the communication hole, and making the reactive gas to react with a silicon compound gas at the downstream to form a silicon-containing film on a substrate arranged at the downstream.
A deposition apparatus, comprising:
- a dielectric window having two principal surfaces, where a microwave being introduced onto one of the two principal surfaces;
- a gas dispersion plate that is provided at a distance from other principal surface of the dielectric window and has a plurality of communication holes;
- a substrate holder provided in downstream of the gas dispersion plate;
- a reactive gas supply port that is in communication with a space between the substrate holder and the other principal surface of the dielectric window;
- and
- a silicon compound gas supply port that is in communication with the space.
3 more elements
Dependencies are inferred from the claim text.