Method for storing and reading data in a multilevel nonvolatile memory, and architecture therefor
AssigneeSTMicroelectronics S.r.I.
InventorPaolo Rolandi
Life of this patent
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AssigneeSTMicroelectronics S.r.I.
InventorPaolo Rolandi
Estimating the term…
According to the multilevel programming method, each memory location can be programmed at a non-binary number of levels. The bits to be stored in the two locations are divided into two sets, wherein the first set defines a number of levels higher than the non-binary number of levels. During programming, if the first set of bits to be written corresponds to a number smaller than the non-binary number of levels, the first set of bits is written in the first location and the second set of bits is written in the second location; ifit is greater than the non-binary number of levels, the first set of bits is written in the second location and the second set of bits is written in the first location. The bits of the first set in the second location are stored in different levels with respect to the bits of the second set.
A method for storing data in a multilevel nonvolatile storage device comprising a plurality of memory locations, each of which can be programmed at a plurality of voltage levels, the method comprising:
A multilevel nonvolatile memory device comprising a plurality of memory cells, each memory cell including a pair of memory locations that together store an odd number of bits.
The nonvolatile memory device according to 13, wherein said first programming means comprise first writing means for writing said second set of bits in a first sub-set of levels of said second memory location, said first writing means being activated in presence of said first value of said storage information;
A method of storing a group of bits into first and second memory locations, comprising:
A method of reading a memory cell that includes first and second memory locations, comprising:
A multilevel nonvolatile memory device comprising:
The nonvolatile memory device according to 24, wherein said first programming means comprise first writing means for writing said second set of bits in a first sub-set of levels of said second memory location, said first writing means being activated in presence of said first value of said storage information;
Dependencies are inferred from the claim text.