High aspect ratio metallization structures
AssigneeMicron Technology, Inc.
InventorsRandle D. Burton, Shane Leiphart
Life of this patent
Estimating the term…
Abstract
A contact interface having a substantially continuous profile along a bottom and lower sides of the active surface of the semiconductor substrate formed within a contact opening is provided. The contact interface is formed by depositing a layer of conductive material, such as titanium, using both a high bias deposition and a low bias deposition. The high bias and low bias deposition may be effected as a two-step deposition or may be accomplished by changing the bias from a high level to a low level during deposition, or vice versa. The conductive material may be converted to a silicide by an annealing process to form the contact interface.
Claims16
A contact comprising:
- a conductive silicide material interface having a profile which substantially covers a bottom and sidewall portions of a contact opening within an active-device region in a silicon-containing semiconductor substrate, the conductive silicide material interface exhibiting a slightly concave shape at corners of the bottom of the contact opening and extending up the sidewall portions of the contact opening within the active-device region;
- and
- a conductive material layer positioned atop the conductive silicide material interface.
A DRAM chip comprising at least one contact, the contact including:
- a conductive silicide material interface having a profile which substantially covers a bottom and sidewall portions of a recess within an active-device region in a silicon-containing semiconductor substrate, the conductive silicide material interface exhibiting a slightly concave shape at corners of the bottom of the recess and extending up the sidewall portions of the recess within the active-device region;
- and
- a conductive material layer positioned atop the conductive silicide material interface.
A contact interface comprising a conductive material which is capable of forming a silicide material, wherein the conductive material has a profile which substantially covers a bottom and sidewall portions of a recess within an active-device region in a silicon-containing semiconductor substrate to a substantially consistent depth, the conductive material exhibiting a slightly concave shape at corners of the bottom of the recess, extending up the sidewall portions and covering surfaces of the active-device region.
Dependencies are inferred from the claim text.