Transcribing original substrate for a wiring pattern
AssigneeNEC Corporation
InventorYoshihiro Ono
Life of this patent
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Abstract
A wiring pattern formation method for forming a wiring pattern on a wafer by using a transcribing operation includes a transcribing step of thermally pressing and adhering a transcribing original substrate 19 that contains a metallic wiring layer 15 to be transcribed and has a linear expansion coefficient in which a dimensional error from a wafer 10 is within a predetermined range in a heated condition, on the wafer 10, and then adhering and transcribing the metallic wiring layer 15.
Claims17
A wiring pattern formation method for forming a wiring pattern on a substrate by using a transcribing operation;
- further including a transcribing step of thermally pressing and adhering a transcribing original substrate that contains a wiring layer to be transcribed and has a linear expansion coefficient in which a dimensional error from the substrate is within a predetermined range in a heated condition, on the substrate, and then adhering and transcribing the wiring layer.
A transcribing original substrate used for a wiring pattern formation method for forming a wiring pattern on a substrate by using a transcribing operation,
- wherein the transcribing original substrate having a wiring layer to be transcribed, and has a linear expansion coefficient in which a dimensional error from the substrate is within a predetermined range in a heated condition resulting from a thermally pressing and adhering operation for the transcribing operation.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- thermally pressing and adhering a transcribing original substrate that having a wiring layer to be transcribed and has a linear expansion coefficient in which a dimensional error from a substrate is within a predetermined range in a heated condition onto the substrate,and adhering and transcribing the wiring layer;
- wherein the substrate is a wafer in which a circuit is already formed,
- sequentially repeating the transcribing operation for forming a multiple wiring layer on the wafer;
- coating a part except an outer electrode formation portion in the wiring layer with an insulator, and mounting an outer electrode terminal at the outer electrode formation portion;
- and
- cutting the wafer into respective pieces, and generating a semiconductor device.
A semiconductor device comprising:
- a multiple wiring layer formed on a wafer, wherein the multiple wiring layer is formed by thermally pressing and adhering a transcribing original substrate that having a wiring layer to be transcribed and has a linear expansion coefficient in which a dimensional error from a substrate is within a predetermined range in a heated condition onto the substrate and adhering and transcribing the wiring layer, sequentially repeating the transcribing operation;
- a substrate composed of respective pieces each having the multiple wiring layer since the wafer is cut;
- and
- an outer electrode terminal mounted at an outer electrode formation portion of the multiple wiring layer.
Dependencies are inferred from the claim text.