High dielectric constant metal oxide gate dielectrics

A method of forming a dielectric layer, comprising:

• forming an oxide layer on a surface of a substrate;
• forming a metal layer over the oxide layer;
• forming a capping layer over the metal layer;
• and
• reacting the metal layer with the oxide layer.

A method of forming a dielectric layer, comprising:

• forming an oxide layer on a surface of a substrate;
• forming a metal layer over the oxide layer;
• and
• reacting at least a first portion of the metal layer with the oxide layer.

A method of forming a field effect transistor, comprising:

• growing a silicon dioxide layer on a surface of a silicon wafer;
• depositing a metal layer superjacent the silicon dioxide layer;
• depositing a capping layer superjacent the metal layer;
• converting the silicon dioxide layer and the metal layer to an epitaxial silicon layer and a metal oxide layer;
• removing the capping layer;
• forming a gate electrode over the metal oxide;
• and
• forming source/drain terminals substantially adjacent the gate electrode.

A method of forming a field effect transistor, comprising:

• growing a silicon dioxide layer on a surface of a silicon wafer;
• depositing a metal layer superjacent the silicon dioxide layer;
• converting the silicon dioxide layer and the metal layer to an epitaxial silicon layer and a metal oxide layer;
• forming a gate electrode over the metal oxide;
• and
• forming source/drain terminals substantially adjacent the gate electrode.