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US 2003/0075733 A1Published application
Light emitting device and method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideaki Kuwabara
Life of this patent
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Abstract
Semiconductor layers for serving as active layers of a plurality of thin film transistors in a pixel are arranged in the same direction and irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers. It is possible to coincide the crystal growth direction with the carrier moving direction, and high field effect mobility can be obtained. Also, semiconductor layers for serving as active layers of a plurality of thin film transistors in a driving circuit and in a CPU are arranged in the same direction, and are irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers.
Claims50
A light emitting device comprising at least one pixel and at least one light emitting element in a pixel portion formed on an insulating surface,
- wherein the pixel portion comprises at least first and second thin film transistors,
- wherein the first thin film transistor is connected to a pixel electrode that is an anode or a cathode of the light emitting element,
- wherein the light emitting element comprises a layer comprising an organic compound as a light emitting layer, and
- wherein the first and second thin film transistors have the same channel length direction.
1 more element
A light emitting device comprising at least one pixel and at least one light emitting element in a pixel portion formed on an insulating surface,
- wherein the pixel portion comprises at least first, second, and third transistors,
- wherein the first thin film transistor is connected to a pixel electrode the light emitting element,
- wherein the light emitting element comprises a layer comprising an organic compound as a light emitting layer, and
- wherein the first to third thin film transistors are arranged to have the same channel length direction.
1 more element
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a first electrode on a substrate that has an insulating surface;
- a second step of forming a first insulating film on the first electrode;
- a third step of leveling a surface of the first insulating film;
- a fourth step of forming a semiconductor film on the first insulating film;
- a fifth step of irradiating continuous wave laser light to crystallize the semiconductor film;
- a sixth step of forming a second insulating film on the semiconductor film;
- a seventh step of selectively etching the first insulating film and the second insulating film to form a contact hole that reaches the first electrode;
- and
- an eighth step of decreasing impurities on a surface of the second insulating film;
- a ninth step of forming a second electrode that is electrically connected to the first electrode through the contact hole and partially overlaps the semiconductor film on the second insulating film.
7 more elements
A method of manufacturing a semiconductor device, comprising steps of:
- forming a first electrode on a substrate that has an insulating surface;
- forming a first insulating film on the first electrode;
- leveling a surface of the first insulating film;
- forming a semiconductor film on the first insulating film;
- forming a second insulating film on the semiconductor film;
- irradiating continuous wave laser light to crystallize the semiconductor film;
- selectively etching the first insulating film and the second insulating film to form a contact hole that reaches the first electrode;
- and
- decreasing impurities on a surface of the second insulating film;
- forming a second electrode that is electrically connected to the first electrode through the contact hole and partially overlaps the semiconductor film on the second insulating film.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a first electrode on a substrate that has an insulating surface;
- a second step of forming a first insulating film on the first electrode;
- a third step of leveling a surface of the first insulating film;
- a fourth step of forming a second insulating film on the first insulating film;
- a fifth step of forming a semiconductor film on the second insulating film;
- a sixth step of irradiating continuous wave laser light to crystallize the semiconductor film;
- a seventh step of forming a third insulating film on the semiconductor film;
- an eighth step of selectively etching the first insulating film, the second insulating film, and the third insulating film to form a first contact hole that reaches the first electrode;
- and
- a ninth step of decreasing impurities on the third insulating film surface;
- a tenth step of forming a second electrode that is electrically connected to the first electrode through the contact hole and partially overlaps the semiconductor film on the third insulating film.
8 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first electrode on a substrate that has an insulating surface;
- forming a first insulating film on the first electrode;
- leveling a surface of the first insulating film;
- forming a second insulating film on the first insulating film;
- forming a semiconductor film on the second insulating film;
- forming a third insulating film on the semiconductor film;
- irradiating continuous wave laser light to crystallize the semiconductor film;
- selectively etching the first insulating film, the second insulating film, and the third insulating film to form a first contact hole that reaches the first electrode;
- and
- decreasing impurities on the third insulating film surface;
- forming a second electrode that is electrically connected to the first electrode through the contact hole and partially overlaps the semiconductor film on the third insulating film.
8 more elements
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a first electrode on a substrate that has an insulating surface;
- a second step of forming a first insulating film on the first electrode;
- a third step of leveling a surface of the first insulating film;
- a fourth step of forming a semiconductor film on the first insulating film;
- a fifth step of irradiating continuous wave laser light to crystallize the semiconductor film;
- a sixth step of forming a second insulating film on the semiconductor film;
- a seventh step of forming on the second insulating film a second electrode that partially overlaps the semiconductor film;
- an eighth step of forming a third insulating film on the second electrode;
- a ninth step of selectively etching the first insulating film, the second insulating film, and the third insulating film to form a first contact hole that reaches the first electrode and a second contact hole that reaches the second electrode;
- and
- a tenth step of forming a third electrode that is electrically connected to the first electrode and to the second electrode through the first contact hole and the second contact hole.
8 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first electrode on a substrate that has an insulating surface;
- forming a first insulating film on the first electrode;
- leveling a surface of the first insulating film;
- forming a semiconductor film on the first insulating film;
- forming a second insulating film on the semiconductor film;
- irradiating continuous wave laser light to crystallize the semiconductor film;
- forming on the second insulating film a second electrode that partially overlaps the semiconductor film;
- forming a third insulating film on the second electrode;
- etching the first insulating film, the second insulating film, and the third insulating film to form a first contact hole that reaches the first electrode and a second contact hole that reaches the second electrode;
- and
- forming a third electrode that is electrically connected to the first electrode and to the second electrode through the first contact hole and the second contact hole.
8 more elements
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a first electrode on a substrate that has an insulating surface;
- a second step of forming a first insulating film on the first electrode;
- a third step of a leveling a surface of the first insulating film;
- a fourth step of forming a second insulating film on the first insulating film;
- a fifth step of forming a semiconductor film on the second insulating film;
- a sixth step of irradiating continuous wave laser light to crystallize the semiconductor film;
- a seventh step of forming a third insulating film on the semiconductor film;
- an eighth step of forming on the third insulating film a second electrode that partially overlaps the semiconductor film;
- an ninth step of forming a fourth insulating film on the second electrode;
- a tenth step of selectively etching the first insulating film, the second insulating film, the third insulating film, and the fourth insulating film to form a first contact hole that reaches the first electrode and a second contact hole that reaches the second electrode;
- and
- a eleventh step of forming a third electrode that is electrically connected to the first electrode and to the second electrode through the first contact hole and the second contact hole.
9 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first electrode on a substrate that has an insulating surface;
- forming a first insulating film on the first electrode;
- a leveling a surface of the first insulating film;
- forming a second insulating film on the first insulating film;
- forming a semiconductor film on the second insulating film;
- forming a third insulating film on the semiconductor film;
- irradiating continuous wave laser light to crystallize the semiconductor film;
- forming on the third insulating film a second electrode that partially overlaps the semiconductor film;
- forming a fourth insulating film on the second electrode;
- selectively etching the first insulating film, the second insulating film, the third insulating film, and the fourth insulating film to form a first contact hole that reaches the first electrode and a second contact hole that reaches the second electrode;
- and
- forming a third electrode that is electrically connected to the first electrode and to the second electrode through the first contact hole and the second contact hole.
9 more elements
Dependencies are inferred from the claim text.