Minimum sized cellular MOS-gated device geometry
AssigneeJBCR Innovations, LLP
InventorRichard A. Blanchard
Life of this patent
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Abstract
A semiconductor device is disclosed and includes a drain region of a first conductivity type, having a first major surface. Diffused into the drain region is a body region of a second conductivity type. A source region is diffused in the body region and it has a general polygonal shape when viewed at the first major surface with two notches directed towards the center of the source region from opposite sides. The body region is accessible through the notches. An oxide layer covers the source and body regions except for a contact opening position over the source region between the two notches exposing only that portion of the source region that is between the two notches and at least a portion of the accessible body region in each of the two notches to facilitate a source contact.
Claims23
A semiconductor device comprising:
- a drain region of a first conductivity type, having a first major surface;
- a body region of a second conductivity type diffused into the drain region from the first major surface;
- a source region of the first conductivity type diffused in the body region having a general polygonal shape when viewed at the first major surface with two notches directed towards the center of the source region from opposite sides of the source region, the body region being access able through the notches;
- and
- an oxide layer covering the source and body regions having a contact opening position over the source region between the two notches exposing only a contact area of the source region that is between the two notches and at least a portion of the accessible body region in each notch.
A semiconductor device comprising:
- a drain region of a first conductivity type, having a first major surface;
- a cell of a body region of a second conductivity type diffused into the drain region, a source region of the first conductivity type diffused in the body region having a general polygonal shape when viewed at the first major surface with two notches directed towards the center of the source region from opposite sides of the source region, the body region being accessible through the notches;
- and
- an oxide layer covering the source and body regions having a contact opening position over the source region between the two notches exposing only a contact area of the source region that is between the two notches and at least a portion of the access able body region in each notch.
A semiconductor device comprising:
- a drain region of a first conductivity type, having a first major surface;
- a body region of a second conductivity type diffused into the drain region from the first major surface;
- a plurality of equally spaced source regions of the first conductivity type diffused in the body region, each source region having a general polygonal shape, when viewed at the first major surface, with two notches directed towards the center of the source region from opposite sides of the source region, the body region being access able through the notches;
- and
- an oxide layer covering the each source region and body regions and having a contact opening position over each source region between the two notches exposing only a contact area of each source region that is between the two notches and at least a portion of the accessible body region.
Dependencies are inferred from the claim text.