Semiconductor device and method of manufacturing the same

Abstract

The present invention has a purpose to provide a Schottky diode allowing obtaining a predetermined reverse-direction breakdown voltage even if a surface state in the vicinity of a Schottky junction interface changes due to the welding of the bonding wire. The semiconductor device having a Schottky junction includes a semiconductor substrate of the first conductivity type. A well region of the second conductivity type is formed in the top surface of the semiconductor substrate. A Schottky electrode is formed on the top surface of the semiconductor substrate and has a Schottky junction with the semiconductor substrate. A connecting conductive member is electrically connected on the Schottky electrode. And, the connecting conductive member is selectively connected with the Schottky electrode above the well region.

Dependencies are inferred from the claim text.