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US 2003/0075715 A1Published application
Thin film transistor
AssigneeNEC Corporation
InventorsMasaharu Satoh, Kentaro Nakahara, Jiro Iriyama, Shigeyuki Iwasa, Yukiko Morioka
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Abstract
The thin film transistor (10) comprises a source region (14), a drain region (15), a channel forming region (16) between the source and drain regions, and a gate electrode (12). In this thin film transistor 10, the channel forming region (16) is composed of an organic compound having a radical.
Claims4
A thin film transistor comprising a source region, a drain region, a channel forming region provided between said source region and said drain region, and a gate electrode provided corresponding to said channel forming region,
- wherein said channel forming region is composed of an organic compound having a radical.
Dependencies are inferred from the claim text.