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US 2003/0073262 A1Published application
Reducing leakage currents in memories with phase-change material
AssigneeOvonyx, Inc.
InventorsDaniel Xu, Tyler A. Lowery
Life of this patent
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Abstract
A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N type region over a less heavily doped N type region. As a result of the configuration of the N type regions forming the buried wordline, the leakage current of the buried wordline to the substrate under reverse bias conditions may be significantly reduced.
Claims30
A method comprising:
- forming a buried line of a first conductive type in a substrate, said buried line including a pair of more lightly doped regions around a more heavily doped region;
- creating a region of a second conductivity type opposite said first conductivity type over said line;
- and
- forming a phase-change material over said region.
1 more element
A memory cell comprising:
- a substrate;
- a phase-change material over said substrate;
- a buried line of a first conductivity type in said substrate, said buried line including a pair of more lightly doped regions around a more heavily doped region;
- and
- a region of a second conductivity type opposite said first conductivity type over said line and under said phase-change material.
2 more elements
An electronic device comprising:
- a surface;
- a phase-change material over said surface;
- and
- a conductive line in said surface having a more heavily doped region sandwiched between more lightly doped regions, said conductive line providing signals to said phase-change material.
1 more element
Dependencies are inferred from the claim text.