Method of titanium and titanium nitride layer deposition

A method of film deposition, comprising:

• forming a titanium nitride structure on a substrate by sequentially depositing and than plasma treating a thin films of titanium nitride, wherein the titanium nitride is deposited by thermally decomposing a gas mixture comprising titanium tetrachloride (TiCl4) and ammonia (NH3), and wherein the titanium nitride is plasma treated using a nitrogen/hydrogen-containing plasma having a nitrogen to hydrogen flow ratio of about 0.1 to about 1.

A method of forming a barrier layer structure, comprising:

• forming a titanium structure on a substrate by sequentially depositing and than plasma treating a thin films of titanium, wherein the titanium is deposited from a reaction of titanium tetrachloride (TiCl4) and hydrogen (H2) in the presence of an electric field, and wherein the titanium is plasma treated using a nitrogen/hydrogen-containing plasma having a nitrogen to hydrogen flow ratio of about 0.1 to about 1;
• and
• forming a titanium nitride structure on titanium structure by sequentially depositing and than plasma treating a thin films of titanium nitride, wherein the titanium nitride is deposited by thermally decomposing a gas mixture comprising titanium tetrachloride (TiCl4) and ammonia (NH3), and wherein the titanium nitride is plasma treated using a nitrogen/hydrogen-containing plasma having a nitrogen to hydrogen flow ratio of about 0.1 to about 1.