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US 2003/0071283 A1Published application
Semiconductor structure with one or more through-holes
AssigneeHymite A/S
InventorMatthias Heschel
Life of this patent
Estimating the term…
Abstract
Semiconductor structures with one or more through-holes are disclosed. A feed-through metallization process may be used to seal the through-holes hermetically.
Claims21
A method of providing a semiconductor structure with one or more through-holes, the semiconductor structure having a front surface and a back surface substantially opposite, the method comprising:
- etching the semiconductor structure from the back surface in one or more back surface areas corresponding to positions of the one or more through-holes;
- and
- etching the semiconductor structure from the front surface in one or more front surface areas corresponding to the positions of the one or more through-holes.
A semiconductor structure comprising:
- a front surface;
- a back surface being arranged substantially opposite to said front surface;
- and
- at least one feed-through interconnect each of which comprises a plurality of through-hole connections,
- wherein each of the through-holes includes feed-through metallization to provide a conductive path between a lower part of the structure and an upper part of the structure.
2 more elements
An optoelectronic assembly structure comprising:
- a semiconductor base having a major surface;
- an optical waveguide integrally formed along the major surface;
- an optoelectronic chip optically coupled to the waveguide;
- a semiconductor lid sealed to the base and forming an enclosure that covers the chip, the lid comprising:
- a front surface;
- a back surface arranged substantially opposite said front surface;
- and
- at least one feed-through interconnect each of which comprises a plurality of through-hole connections.
5 more elements
Dependencies are inferred from the claim text.