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US 2003/0071276 A1Published application
Epitaxial growth of nitride semiconductor device
AssigneeUnited Epitaxy Company, Ltd.
InventorsChih-Sung Chang, Tzong-Liang Tsai
Life of this patent
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Abstract
The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.
Claims17
A semiconductor device, comprising:
- a monocrystalline substrate;
- multiple nucleuses on the monocrystalline substrate, the multiple nucleuses being made of at least two materials having different crystal lattice constants, the multiple nucleuses being respectively isolated;
- a dislocation inhibition layer on the multiple nucleuses;
- and
- an epitaxy layer on the dislocation inhibition layer.
2 more elements
A light emitting semiconductor device, comprising:
- a monocrystalline substrate;
- multiple nucleuses on the monocrystalline substrate, the multiple nucleuses being made of at least two materials having different crystal lattice constants, the multiple nucleuses being respectively isolated;
- an AlxInyGa1−x−yN dislocation inhibition layer on the multiple nucleuses, wherein 0≦x≦1, 0≦y≦1, and 0≦x+y≦1;
- an n-type AlwInzGa1−w−zN cladding layer on the dislocation inhibition layer, wherein 0≦w≦1, 0≦z≦1, and 0≦w+z≦1;
- an InGaN active layer on the n-type cladding layer;
- a p-type AlsIntGa1−s−tN cladding layer on the active layer, wherein 0≦s≦1,0≦t≦1, and 0≦s+t≦1;
- and
- a p-type AluInvGa1−u−vN electrode layer on the p-type cladding layer, wherein 0≦u≦1, 0≦v≦1 and 0≦u+v≦1.
5 more elements
A light emitting semiconductor device, comprising:
- a monocrystalline substrate;
- multiple nucleuses on the monocrystalline substrate, the multiple nucleuses being made of at least two materials having different crystal lattice constants, the multiple nucleuses being respectively isolated;
- an AlxInyGa1−x−yN dislocation inhibition layer on the multiple nucleuses, wherein 0≦x≦1, 0≦y≦1, and 0≦x+y≦1;
- a p-type AlwInzGa1−w−zN cladding layer on the dislocation inhibition layer, wherein 0≦w≦1, 0≦z≦1, and 0≦w+z≦1;
- an InGaN active layer on the p-type cladding layer;
- and
- an n-type AlsIntGa1−s−tN cladding layer on the active layer, wherein 0≦s≦1, 0≦t≦1, and 0≦s+t≦1, the n-type AlsIntGa1−s−tN cladding layer serves as a cladding layer of the InGaN active layer and an electrode layer of the semiconductor device as well.
4 more elements
Dependencies are inferred from the claim text.