US 2003/0068898 A1 · Dry etching method for manufacturing processes of semiconductor devices

Abstract

A method of etching that can increase the etching selectivity between the dielectric material and silicon in a polysilicon etching apparatus is disclosed. The present invention is a dry etching method, and the gas recipe of the polysilicon plasma etching apparatus is adjusted to serve carbon tetrafluoride (CF4)/fluoromethane (CHxFy; x=2, y=2 or x=1, y=3)/Oxygen (O2) as the reactive gas. Therefore, the dielectric material layer and the polysilicon layer both can be etched in a polysilicon plasma etching apparatus, and the etching selectivity between the dielectric material layer and silicon can be enhanced greatly, so that a straight etching profile and a stable chamber environment can be obtained.

Claims29

Dependent claims

A dry etching method for manufacturing processes of semiconductor devices, comprising:

providing a wafer, and the wafer has a dielectric material layer and a silicon material layer formed thereon;
providing a plurality of accelerated electrons;
providing a reactive gas, wherein the reactive gas comprises carbon tetrafluoride (CF4), fluoromethane (CHxFy;
x=2, y=2 or x=1, y=3), and oxygen (O2), and the reactive gas collides with the accelerated electrons to produce a plurality of ions, a plurality of radicals, and a plurality of atoms;
and
etching the dielectric material layer and the silicon material layer with the use of the ions, the radicals, and the atoms.

3 more elements

Dependencies are inferred from the claim text.

Dry etching method for manufacturing processes of semiconductor devices

Life of this patent

Dry etching method for manufacturing processes of semiconductor devices

Life of this patent

Abstract

Claims29