Film deposition method and film deposition system for depositing a halogen compound film, and magnesium fluoride film
AssigneeShinmaywa Industries, Ltd.
InventorsTakanobu Hori, Hiroshi Kajiyama, Akira Kato
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AssigneeShinmaywa Industries, Ltd.
InventorsTakanobu Hori, Hiroshi Kajiyama, Akira Kato
Estimating the term…
This invention provides film deposition method and film deposition system for depositing a halogen compound film, which are capable of depositing such a film while suppressing abuse that occurs due to deficiency of a halogen element even if the halogen element is dissociated from a film material. Specifically, the halogen compound film is deposited through a process including: evaporating a film material comprising a halogen compound by means of an evaporation source 3; ionizing the evaporated film material with a radio frequency power outputted from a radio frequency power supply unit 11 and supplied through a substrate holder 2; and causing the ionized film material to deposit on the substrate 5. In this process a bias voltage outputted from a bias power supply unit 12 and applied to the substrate holder 2 causes halogen ions dissociated from ions of the halogen compound to be incorporated into the film being deposited on the substrate 5.
A film deposition method for depositing a halogen compound film, comprising the steps of:
An apparatus for forming a halogen compound film, comprising:
A magnesium fluoride film obtainable by a method comprising the steps of:
A magnesium fluoride film having a crystal grain diameter not less than 3 nm and not more than 10 nm.
Dependencies are inferred from the claim text.