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US 2003/0067950 A1Published application
Nitride semiconductor laser device
AssigneeSharp Kabushiki Kaisha
InventorDaisuke Hanaoka
Life of this patent
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Abstract
A nitride semiconductor laser chip 103 is fixed to a submount 102 serving as a mount member with solder 107. The submount 102 is made of a material having a thermal expansion coefficient higher than that of a nitride semiconductor substrate, and has a thickness equal to or greater than 1.2 times the thickness of the layered nitride semiconductor structure composed of an n-type GaN substrate 1 and a layered nitride semiconductor portion 2. Between the n-type GaN substrate 1 and the submount 102 is laid a metal film having a thickness of from 1 to 50 μm.
Claims36
A nitride semiconductor laser device comprising:
- a nitride semiconductor laser chip composed of a nitride semiconductor substrate and a layered nitride semiconductor portion having a plurality of nitride semiconductor layers laid on a surface of the nitride semiconductor substrate;
- and
- a mount member to which the nitride semiconductor laser chip is fixed, the mount member being made of a material having a thermal expansion coefficient higher than a thermal expansion coefficient of the nitride semiconductor substrate, the mount member having a thickness equal to or greater than 1.2 times a thickness of a layered nitride semiconductor structure composed of the nitride semiconductor substrate and the layered nitride semiconductor portion.
Dependencies are inferred from the claim text.