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US 2003/0067802 A1Published application
Method for modifying switching field characteristics of magnetic tunnel junctions
AssigneeHewlett-Packard Development Company, L.P.
InventorsThomas Anthony, Lung Tran, Manish Sharma
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Abstract
A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.
Claims31
A method comprising:
- forming a magnetic tunnel junction including pinned and sense layers;
- and
- re-setting a magnetization vector of at least one of the layers.
A method comprising:
- forming a magnetic tunnel junction including pinned and sense layers;
- determining a desired switching curve for the junction;
- and
- re-setting a magnetization vector of at least one of the layers.
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A magnetic tunnel junction comprising:
- a pinned layer having a first magnetization vector lying in a plane of the pinned layer;
- and
- a sense layer having a second magnetization vector lying in a plane of the sense layer;
- at least one of the first and second magnetization vector having been re-set to a different angle, the different angle corresponding to a desired switching curve of the junction.
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Dependencies are inferred from the claim text.