Current-controlled CMOS circuit using higher voltage supply in low voltage CMOS process
AssigneeBroadcom Corporation
InventorsGuangming Yin, Ichiro Fujimori, Armond Hairapetian
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AssigneeBroadcom Corporation
InventorsGuangming Yin, Ichiro Fujimori, Armond Hairapetian
Estimating the term…
Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic fabricated in conventional CMOS process technology. An entire family of logic elements including inverter/buffers, level shifters, NAND, NOR, XOR gates, latches, flip-flops and the like are implemented using C3MOS techniques. Optimum balance between power consumption and speed for each circuit application is achieve by combining high speed C3MOS logic with low power conventional CMOS logic. The combined C3MOS/CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems. The C3MOS structure enables the use of a power supply voltage that may be larger than the voltage required by the CMOS fabrication process, further enhancing the performance of the circuit.
A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit fabricated on a silicon substrate, comprising:
A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit comprising:
A method for processing high speed signals using silicon complementary metal-oxide-semiconductor (CMOS) technology, the method comprising:
Dependencies are inferred from the claim text.