Bandgap reference voltage generator with a low-cost, low-power, fast start-up circuit
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHao-Chiao Hong
Life of this patent
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHao-Chiao Hong
Estimating the term…
A bandgap voltage reference generator includes a bandgap voltage reference circuit and a fast startup circuit. The fast start-up circuit, which is cost-efficient and saves power consumption can rapidly start up the bandgap reference voltage circuit coupled thereto. The fast start-up circuit comprises a P-channel MOSFET or an N-channel MOSFET. Upon the bandgap voltage reference generator is powered by an external DC voltage, the bandgap reference generator will possibly operates in power-down operating state. At the time, there exists a large voltage drop between the gate and the source of the P-channel MOSFET (or N-channel MOSFET), and thus a large current flows rapidly through the P-channel MOSFET (or N-channel MOSFET). Voltages of drains of two specific MOSFETs in the bandgap voltage reference circuit will thus be pulled to be substantially the same, and the bandgap voltage reference circuit is brought into normal operating state. The output of the bandgap reference generator is then very close to the bandgap voltage of silicon.
A bandgap voltage reference generator for providing a reference voltage, wherein said bandgap voltage reference generator comprises:
A bandgap voltage reference generator for providing a reference voltage, wherein said bandgap voltage reference generator comprises:
A method of providing a reference voltage for a bandgap voltage reference generator, which comprises a bandgap voltage reference circuit and a startup circuit, said method comprising the steps of:
20 The method according to claim 19, wherein said threshold is a threshold voltage of a MOSFET.
Dependencies are inferred from the claim text.