Semiconductor substrate for a one-chip electronic device and related manufacturing method
AssigneeDenso Corporation
InventorsKazuhiro Tsuruta, Nobuaki Kawahara
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Abstract
A plurality of grooves, each having a depth of 10 μm or more and arranged adjacent to each other, are formed at a predetermined portion of a semiconductor substrate where a passive element is formed. Then, a thermal oxidation treatment is performed to let an oxide film grow from an inside surface of each groove so as to fill an inside space of the groove with a thermal oxide film thus grown and turn an entire portion intervening between adjacent grooves into a thermal oxide layer. Each groove has a width of 1 μm or less, and a width of a semiconductor material intervening between two adjacent grooves is 81.8% or more with respect to the groove width.
Claims31
A semiconductor substrate comprising:
- a passive element disposed on an insulating member;
- an active element formed in a surficial region of said insulating member;
- and
- a thermal oxide layer formed at a predetermined portion corresponding to said passive element, said thermal oxide layer having a thickness of 10 μm or more.
A method for manufacturing a semiconductor substrate comprising a passive element disposed on an insulating member and an active element formed in a surficial region of said insulating member, said manufacturing method comprising:
- a step of forming a groove having a depth of 10 μm or more at a predetermined portion of said semiconductor substrate where said passive element is formed, and
- a step of performing a thermal oxidation treatment to let an oxide film grow from an inside surface of said groove so as to fill an inside space of said groove with a thermal oxide film thus grown.
A method for manufacturing a semiconductor substrate comprising a passive element disposed on an insulating member and an active element formed in a surficial region of said insulating member, said manufacturing method comprising:
- a step of forming a plurality of grooves each having a depth of 10 μm or more and arranged adjacent to each other at a predetermined portion of said semiconductor substrate where said passive element is formed, and
- a step of performing a thermal oxidation treatment to let an oxide film grow from an inside surface of said groove so as to fill an inside space of said groove with a thermal oxide film thus grown and turn an entire portion intervening between adjacent grooves into a thermal oxide layer.
A method for manufacturing a semiconductor substrate comprising a passive element disposed on an insulating member and an active element formed in a surficial region of said insulating member, said manufacturing method comprising:
- a step of forming a plurality of grooves each having a depth of 10 μm or more and arranged adjacent to each other at a predetermined portion of said semiconductor substrate where said passive element is formed,
- a step of performing a thermal oxidation treatment to let an oxide film grow from an inside surface of said groove so as to incompletely fill an inside space of said groove with a thermal oxide film thus grown and turn an entire portion intervening between adjacent grooves into a thermal oxide layer, and
- a step of filling a narrowed groove incompletely shrunken from said groove with an insulating material.
Dependencies are inferred from the claim text.