High-frequency switching device incorporating an inverter circuit
AssigneeKabushiki Kaisha Toshiba
InventorsKatsue Kawakyu, Naotaka Kaneta
Life of this patent
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Abstract
A high frequency switching device includes a control terminal, a power source terminal, a GND terminal, an RF terminal, a switch section, a control section, and protecting diodes. The switch section switches input/output routes of an RF signal input from the RF terminal. The control section controls the switching section, and is connected to the control terminal and the power source terminal. The protecting diodes are provided between the control terminal and the RF terminal, between the control terminal and the GND terminal, and between the power source terminal and the GND terminal.
Claims16
A high frequency switching device comprising:
- a control terminal;
- a power source terminal;
- a GND terminal;
- an RF terminal;
- a switch section which switches input/output routes of an RF signal input from the RF terminal;
- a control section which controls the switching section, the control section connected to the control terminal and the power source terminal;
- and
- protecting diodes provided between the control terminal and the RF terminal, between the control terminal and the GND terminal, and between the power source terminal and the GND terminal .
A high-frequency switching device comprising:
- a control terminal;
- a power source terminal;
- an RF terminal;
- a switch section which switches input/output routes of an RF signal input from the RF terminal and includes a plurality of FETs having gates connected to resistor elements aligned in a row, said switch section including an RF signal wire which is laid above a region where the resistor elements are aligned and through which the RF signal transmits;
- and
- a control section which controls the switching section, the control section connected to the control terminal and the power source terminal.
Dependencies are inferred from the claim text.