Surface densification of low dielectric constant film
OwnerNeng-Hui Yang, Ming-Sheng Yanginventors
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Abstract
A method of densifying a superficial layer on a low dielectric constant film. A substrate is provided. A low dielectric constant material layer is formed over the substrate. An inert gas plasma treatment of the low dielectric constant material layer is conducted so that a superficial layer of the low dielectric constant material layer is densified into a protective layer. The protective layer protects the low dielectric constant material layer against attacks by plasma and chemicals during subsequent processes and prevents any deterioration of electrical properties.
Claims19
A method of densifying a superficial layer of a low dielectric constant film, comprising:
- providing a substrate having a low dielectric constant material layer thereon;
- and
- performing an inert gas plasma treatment of the substrate so that a superficial layer of the low dielectric constant material layer is densified into a protective layer.
A method of forming a metallic interconnect structure, comprising:
- providing a substrate;
- forming a low dielectric constant material layer over the substrate;
- forming a dual damascene structure in the low dielectric constant material layer;
- performing an inert gas plasma treatment of the substrate so that a superficial layer of the low dielectric constant material layer is densified into a protective layer;
- and
- performing a hydrogen plasma treatment of the dual damascene structure to remove metallic oxide material on a surface of the dual damascene structure.
A method of forming a low dielectric constant film pattern, comprising:
- providing a substrate;
- forming a low dielectric constant material layer over the substrate;
- performing an inert gas plasma treatment of the substrate so that a superficial layer of the low dielectric constant material layer is densified into a protective layer;
- forming a patterned photoresist layer over the low dielectric constant material layer;
- etching the low dielectric constant material layer while using the photoresist layer as a mask to form an opening;
- and
- performing a plasma treatment on the substrate to remove the photoresist layer.
Dependencies are inferred from the claim text.