Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorKazuo Hashimi
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises impurity diffusion layers formed in a semiconductor substrate and containing a metal element, whose siliciding activation energy is less than 1.8 eV, at a concentration of more than 1×1011 atoms/cm2 and less than 1×1015 atoms/cm2, an insulating film formed on the semiconductor substrate, contact holes formed in the insulating film on the impurity diffusion layers, and contact plugs formed via the contact holes. Accordingly, there is provided the semiconductor device that has a connection structure between an impurity-containing semiconductor layer and a conductive film and is capable of suppressing a leakage current generated at a contact portion between the impurity diffusion layer and the conductive film.
Claims32
A semiconductor device comprising:
- a semiconductor substrate;
- an impurity diffusion layer formed in the semiconductor substrate and containing a metal element, whose siliciding activation energy is less than 1.8 eV, at a concentration of more than 1×1011 atoms/cm2 and less than 1×1015 atoms/cm2;
- an insulating film formed on the semiconductor substrate;
- and
- a conductive plug formed in the insulating film so as to electrically connect the impurity diffusion layer.
A manufacturing method of semiconductor device comprising the steps of:
- forming an impurity diffusion layer in a semiconductor substrate;
- forming a first insulating film on the semiconductor substrate and the impurity diffusion layer;
- forming a contact hole on the impurity diffusion layer by etching a part of the first insulating film;
- introducing a metal element, whose siliciding activation energy is less than 1.8 eV, into area of the impurity diffusion layer;
- and
- forming a conductive plug in the contact hole.
Dependencies are inferred from the claim text.