Structures and methods to enhance copper metallization

A method for forming an enhanced metallization layer, the method comprising:

• forming an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, and a fluorinated-foamed polymer;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing a second substance on the insulator layer, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein forming the inhibiting layer includes reacting the first substance and the second substance to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization layer on the inhibiting layer.

A method for forming an enhanced metallization layer, the method comprising:

• forming an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, and a fluorinated-foamed polymer;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing a second substance on the insulator layer, wherein depositing the second substance includes depositing the second substance using a technique selected from a group consisting of low-energy implantation and chemical vapor deposition, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein forming the inhibiting layer includes reacting the first substance and the second substance to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization on the inhibiting layer.

A method for forming an enhanced metallization layer, the method comprising:

• forming an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of a polyimide or a foamed polyimide;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing zirconium on the insulator layer, wherein depositing the zirconium includes implanting zirconium using a low-energy implantation technique, and wherein forming the inhibiting layer includes reacting the first substance and zirconium to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization layer on the inhibiting layer.

A method for forming an enhanced metallization layer, the method comprising:

• forming an insulator layer having an insulator oxide compound;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing aluminum on the insulator layer, wherein depositing aluminum includes implanting aluminum using a low-energy implantation technique, and wherein forming the inhibiting layer includes reacting the oxide compound and aluminum to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization layer on the inhibiting layer.

A method for forming an enhanced metallization layer, the method comprising:

• forming an insulator layer having a first substance, wherein the insulator layer is formed with a first predetermined thickness;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing a second substance on the insulator layer, and wherein forming the inhibiting layer includes reacting the first substance and the second substance to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization layer on the inhibiting layer with a second predetermined thickness.

A method for forming an enhanced metallization layer, the method comprising:

• forming an insulator layer having a first substance, wherein the insulator layer is formed with a first predetermined thickness;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing a second substance on the insulator layer, and wherein forming the inhibiting layer includes reacting the first substance and second substance to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization layer on the inhibiting layer with a second predetermined thickness, wherein the second predetermined thickness of the copper metallization layer is proportional to the first predetermined thickness of the insulator layer.

A method for forming an enhanced metallization layer, the method comprising:

• forming an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, and an oxide compound;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing a second substance on the insulator layer, wherein depositing the second substance includes depositing the second substance using a technique selected from a group consisting of low-energy implantation and chemical vapor deposition, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein forming the inhibiting layer includes reacting the first substance and second substance to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization layer on the inhibiting layer.

A method for forming a semiconductor structure, the method comprising:

• forming a protective layer that comprises an insulator nitride compound;
• forming a first insulator layer abutting the protective layer;
• forming at least one contact metallization layer, wherein the at least one contact metallization layer defines at least one opening through the protective layer and the first insulator layer;
• depositing a first and second contact materials to form at least one contact plug in the at least one opening, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten;
• forming a second insulator layer, wherein forming the second insulator layer includes depositing a substance with a first predetermined thickness and curing the substance, and wherein the substance comprises polyimide;
• etching a first metallization layer into the second insulator layer;
• implanting into the second insulator layer a dose of about 5×1016 ions per square centimeters of zirconium at about 400 electron-volts to about 600 electron-volts with the angle of implantation varying from about 5 degrees to about 10 degrees from normal;
• forming an inhibiting layer on the second insulator layer by reacting zirconium with polyimide at about 325 degrees Celsius to about 375 degrees Celsius for about 27 minutes to about 33 minutes;
• planting a seed layer of copper on the inhibiting layer;
• and
• electroplating the copper layer so as to form a copper metallization layer.

A method for forming a semiconductor structure, the method comprising:

• forming a protective layer that comprises an insulator nitride compound;
• forming a first insulator layer abutting the protective layer;
• forming at least one contact metallization layer, wherein the at least one contact metallization layer defines at least one opening through the protective layer and the first insulator layer;
• depositing a first and second contact materials to form at least one contact plug in the at least one opening, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten;
• forming a second insulator layer, wherein forming the second insulator layer includes depositing a substance with a first predetermined thickness, and wherein the substance comprises an insulator oxide compound;
• etching a first metallization layer into the second insulator layer;
• implanting into the second insulator layer a dose of about 5×1016 ions per square centimeters of aluminum at about 400 electron-volts to about 600 electron-volts with the angle of implantation varying from about 5 degrees to about 10 degrees from normal;
• forming an inhibiting layer on the second insulator layer by reacting aluminum with the insulator oxide compound at about 325 degrees Celsius to about 375 degrees Celsius for about 30 minutes;
• planting a seed layer of copper on the inhibiting layer;
• and
• electroplating the copper layer so as to form a copper metallization layer.

A semiconductor structure comprising:

• an insulator layer having a first substance, wherein the first substance comprises a material having a plurality of single hydrocarbon molecule bonded together;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a compound formed from the first substance and a second substance so as to inhibit undesired atomic migration;
• and
• a copper metallization layer on the inhibiting layer.

A semiconductor structure comprising:

• an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of a polymer and a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a second substance, wherein the second substance is selected from a group consisting of a transition metal and a representative metal, and wherein the inhibiting layer includes a compound formed by the first substance and the second substance so as to inhibit undesired atomic migration;
• and
• a copper metallization layer on the inhibiting layer.

A semiconductor structure comprising:

• an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a second substance, wherein the second substance is selected from a group consisting of a transition metal and a representative metal, and wherein the inhibiting layer includes a compound formed by the first substance and the second substance so as to inhibit undesired atomic migration;
• and
• a copper metallization layer on the inhibiting layer.

A semiconductor structure comprising:

• an insulator layer having a first substance, wherein the first substance comprises silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a second substance, wherein the second substance is selected from a group consisting of a transition metal and a representative metal, and wherein the inhibiting layer includes a compound formed by the first substance and the second substance so as to inhibit undesired atomic migration;
• and
• a copper metallization layer on the inhibiting layer.

A semiconductor structure comprising:

• an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a second substance, wherein the second substance is selected from a group consisting of a transition metal and a representative metal, and wherein the inhibiting layer includes a compound formed by the first substance and the second substance so as to inhibit undesired atomic migration;
• and
• a copper metallization layer on the inhibiting layer.

A semiconductor structure comprising:

• an insulator layer with a first predetermined thickness having a first substance;
• forming an inhibiting layer on the insulator layer, wherein forming the inhibiting layer includes depositing a second substance on the insulator layer, and wherein forming the inhibiting layer includes reacting the first substance and the second substance to form a compound so as to inhibit undesired atomic migration;
• and
• forming a copper metallization layer on the inhibiting layer with a second predetermined thickness.

A semiconductor structure comprising:

• an insulator layer having a first substance, wherein the first substance comprises a material selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, and an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the inhibiting layer includes a compound formed form a reaction between the first substance and the second substance so as to inhibit undesired atomic migration;
• and
• a copper metallization layer on the inhibiting layer.

A semiconductor structure comprising:

• a protective layer that comprises an insulator nitride compound;
• a first insulator layer abutting the protective layer;
• at least one contact metallization layer, wherein the at least one contact metallization layer defines at least one opening through the protective layer and the first insulator layer;
• a first and second contact materials that define at least one contact plug in the at least one opening, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten;
• a second insulator layer that comprises polyimide;
• an inhibiting layer on the second insulator layer having a compound formed from a reaction between zirconium and polyimide;
• and
• a copper metallization layer.

A semiconductor structure comprising:

• a protective layer that comprises an insulator nitride compound;
• a first insulator layer abutting the protective layer;
• at least one contact metallization layer, wherein the at least one contact metallization layer defines at least one opening through the protective layer and the first insulator layer;
• a first and second contact materials that defines at least one contact plug in the at least one opening, wherein the first contact material includes titanium nitride, and wherein the second contact material includes tungsten;
• a second insulator layer, wherein the second insulator layer includes a substance with a first predetermined thickness, and wherein the substance comprises an insulator oxide compound;
• an inhibiting layer on the second insulator layer formed by a reaction that comprises aluminum and the insulator oxide compound;
• and
• a copper metallization layer.

A semiconductor structure comprising:

• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• and
• a copper metallization layer on the inhibiting layer.

A memory cell comprising:

• a capacitor;
• and
• at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• and
• a copper metallization layer on the inhibiting layer.

A memory array comprising:

• at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• and
• a copper metallization layer on the inhibiting layer.

A memory device comprising:

• a memory array that comprises at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• and
• a copper metallization layer on the inhibiting layer;
• an address decoder;
• a row access circuitry;
• a column access circuitry;
• a controller;
• and
• an input/output circuit.

A circuit module comprising:

• a plurality of dies, wherein at least one die comprises at least one integrated circuit, wherein the at least one integrated circuit comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• a copper metallization layer on the inhibiting layer;
• and
• a plurality of leads coupled to the plurality of dies to provide unilateral or bilateral communication and control.

A memory module comprising:

• a plurality of memory devices, wherein at least one memory device comprises at least one memory array, the at least one memory array comprises at least one memory cell, wherein the at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• and
• a copper metallization layer on the inhibiting layer;
• and
• a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal;
• and
• a plurality of data links coupled to the plurality of memory devices to communicate data.

An electronic system comprising:

• a plurality of circuit modules that comprises a plurality of dies, wherein at least one die of the plurality of dies comprises at least one integrated circuit, wherein the at least one integrated circuit comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• a copper metallization layer on the inhibiting layer;
• and
• a plurality of leads coupled to the plurality of dies to provide unilateral or bilateral communication and control;
• and
• a user interface.

A memory system comprising:

• a plurality of memory modules that comprises a plurality of memory devices, wherein at least one memory device comprises at least one memory array, the at least one memory array comprises at least one memory cell, wherein the at least one memory cell that includes at least one capacitor and at least one transistor having a gate, drain, and source, wherein the drain is interconnected to the capacitor through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• and
• a copper metallization layer on the inhibiting layer;
• a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal;
• a plurality of data links coupled to the plurality of memory devices to communicate data;
• and
• a memory controller.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance is selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, an aerogel, and an insulator oxide compound, wherein the polymer includes polyimide, and wherein the insulator oxide compound includes silicon dioxide;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound formed from a reaction that includes the first substance and a second substance, wherein the second substance is selected from a group consisting of a transition metal, a representative metal, and a metalloid, and wherein the transition metal is selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum, wherein the representative metal is selected from a group consisting of aluminum and magnesium, and wherein the metalloid includes boron;
• a copper metallization layer on the inhibiting layer;
• a memory system;
• at least one user interface device, wherein the at least one user interface device includes a monitor;
• at least one output device, wherein the at least one output device includes a printer;
• and
• at least one bulk storage device.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a transition metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a representative metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is aluminum and magnesium;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a transition metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a representative metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is aluminum and magnesium;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises a foamed polymer;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a transition metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a representative metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is aluminum and magnesium;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a transition metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a representative metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is aluminum and magnesium;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an aerogel;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a transition metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance selected from a group consisting of chromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium, and tantalum;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a representative metal;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is aluminum and magnesium;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance is a metalloid;
• and
• a copper metallization layer on the inhibiting layer.

A computer system comprising:

• a processor that comprises at least two semiconductor devices, wherein the at least two semiconductor devices are interconnected through a semiconductor structure, wherein the semiconductor structure comprises:
• an insulator layer having a first substance, wherein the first substance comprises an insulator oxide compound;
• an inhibiting layer on the insulator layer, wherein the inhibiting layer comprises a compound that includes the first substance and a second substance, wherein the second substance includes boron;
• and
• a copper metallization layer on the inhibiting layer.