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AssigneeTokyo Electron Limited
InventorsNobuo Konishi, Mitsuaki Iwashita, Hiroki Ohno, Shigeru Kawamura, Masahito Sugiura
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The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.
A film forming method, comprising the steps of:
A film forming method, comprising the steps of;
A film forming method comprising the steps of:
A film forming apparatus, comprising:
A film forming apparatus, comprising:
A film forming apparatus, comprising:
Dependencies are inferred from the claim text.