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US 2002/0177292 A1Published application
Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
AssigneeOvonyx, Inc.
InventorCharles Dennison
Life of this patent
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Abstract
The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single film is deposited but two isolated lower electrodes are formed therefrom. Additionally a diode stack is formed that communicates to the lower electrode.
Claims22
In a memory array, a process of forming a phase-change memory cell comprising:
- forming an isolation structure;
- forming an N+ base below the isolation structure;
- forming a protective layer over the memory array;
- selectively removing the protective layer to form a silicided CMOS device peripheral to the memory array;
- forming a lower electrode in a first recess, wherein the lower electrode touches a self-aligned emitter active area below the first recess;
- and
- forming a phase-change memory element.
4 more elements
A process of forming a memory cell comprising:
- forming a first shallow isolation trench in a memory array;
- forming an N+ base implantation in the memory array;
- forming a protective layer over the memory array;
- forming peripheral CMOS device;
- forming a first dielectric layer over the memory array;
- forming a recess in the first dielectric layer;
- forming a self-aligned emitter active area below the recess;
- forming a lower electrode in the recess;
- forming a phase-change element in contact with the lower electrode;
- forming a top electrode in contact with the phase-change element;
- forming a second dielectric layer over the top electrode;
- forming a contact hole in the second dielectric layer;
- and
- forming a self-aligned base active area at the bottom of the contact hole.
11 more elements
Dependencies are inferred from the claim text.