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US 2002/0177290 A1Published application
Process for annealing semiconductors and/or integrated circuits
AssigneeCypress Semiconductor Corporation
InventorsKrishnaswamy Ramkumar, Manuj Rathor
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Abstract
A method of making a semiconductor structure, includes annealing a structure in a deuterium-containing atmosphere. The structure includes (i) a substrate, (ii) a gate dielectric on the substrate, (iii) a gate on the gate dielectric, (iv) an etch-stop layer on the gate, and (v) an interlayer dielectric on the etch-stop layer.
Claims16
A method of making a semiconductor structure, comprising:
- annealing a structure in a deuterium-containing atmosphere;
- wherein said structure comprises
- (i) a substrate,
- (ii) a gate dielectric on said substrate,
- (iii) a gate, on said gate dielectric,
- (iv) an etch-stop layer, on said gate,
- (v) an interlayer dielectric, on said etch-stop layer, and
- (vi) a contact hole, through said interlayer dielectric and said etch-stop layer, and
- a portion of the substrate is exposed through said contact hole.
6 more elements
A semiconductor device, comprising:
- (i) a substrate,
- (ii) a gate dielectric on said substrate,
- (iii) a gate, on said gate dielectric, and
- (iv) a silicon nitride layer, on said gate,
- wherein said silicon nitride layer is not enriched with deuterium, and an interface between said gate dielectric and said substrate is enriched with deuterium.
2 more elements
Dependencies are inferred from the claim text.