Semiconductor device having a shallow junction and a fabrication process thereof
AssigneeFujitsu Limited
InventorsMASATAKA KASE, TOSHIKI MIYAKE, MITSUAKI HORI, KENICHI HIKAZUTANI, MANABU NAKAMURA, TAKAYUKI WADA, YOSHIKAZU KATAOKA
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Abstract
A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.
Claims10
A method of fabricating a semiconductor device, comprising the steps of:
- introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in said Si substrate by said impurity element is less than about 50 nm;
- and
- annealing, after said step of ion implantation process, said substrate;
- wherein said method further includes a step of removing an oxide film from a surface of said Si substrate before said step of ion implantation process.
A method as claimed in claim 2, wherein said ion implantation process of said impurity element is conducted with an acceleration energy of 0.2-1.5 keV.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a chemical oxide film on a surface of a Si substrate;
- reducing the number of Si—O dangling bonds existing on a surface of said chemical oxide film;
- introducing an impurity element into said Si substrate through said chemical oxide film under an acceleration energy set such that the depth of a junction formed in said Si substrate by said impurity element is less than about 50 nm;
- and
- annealing said Si substrate thus introduced with said impurity element for activating said impurity element in said Si substrate.
Dependencies are inferred from the claim text.