Capacitor for integration with copper damascene processes and a method of manufacture therefore

A semiconductor device formed on a substrate of a semiconductor wafer, comprising:

• transistors formed over a substrate;
• damascene interconnect structures formed over and electrically connected to the transistors;
• an insulator layer formed on one of the damascene interconnect stuctures;
• a conductive layer formed over one of the damascene interconnect structures;
• and
• a capacitor, comprising:
• a first capacitor electrode comprising at least a portion of one of the damascene interconnect structures;
• a capacitor dielectric layer comprising a portion of the insulator layer;
• and
• a second capacitor electrode comprising a portion of the conductive layer.

A method of fabricating a capacitor for use in a semiconductor device having a damascene interconnect structure formed over a substrate of a semiconductor wafer, comprising:

• forming, a first capacitor electrode comprised of a portion of a damascene interconnect structure;
• forming an insulator layer formed on the damascene interconnect structure, the insulator layer being a passivation layer;
• and
• forming a second capacitor electrode comprised of a conductive layer formed on at least a portion of the insulator layer.