Method of forming polycrystalline silicon fo liquid crystal display device
AssigneeLG.Philips LCD Co., Ltd.
InventorsKwang Jo Hwang, Binn Kim, Hae Yeol Kim, Jong Uk Bae
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Abstract
A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous silicon layer, forming a catalytic metal gettering layer adjacent to the amorphous silicon layer, and heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.
Claims22
A method for forming polycrystalline silicon from amorphous silicon, comprising:
- forming an amorphous silicon layer on a substrate;
- forming a plurality of catalytic metal clusters on the amorphous silicon layer;
- forming a catalytic metal gettering layer adjacent to the amorphous silicon layer;
- and
- heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.
A method of forming polycrystalline silicon from amorphous silicon, comprising:
- forming an amorphous silicon layer on a substrate;
- forming a plurality of catalytic metal clusters on the amorphous silicon layer;
- simultaneously applying electric fields to the catalytic metal clusters and first heat-treating the substrate to transform the amorphous silicon layer into a polycrystalline silicon layer;
- forming a catalytic metal gettering layer on the polycrystalline silicon layer;
- second heat-treating the substrate including the polycrystalline silicon layer to getter unreacted catalytic metal clusters migrated at the catalytic metal gettering layer;
- and
- removing the catalytic metal gettering layer including the unreacted catalytic metal clusters.
Dependencies are inferred from the claim text.