Method of forming tunnel oxide layer
AssigneeMacronix International Co., Ltd.
InventorChin-Ta Su
Life of this patent
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Abstract
A method of forming a tunnel oxide layer is disclosed. The method of the present invention uses the rapid thermal process (RTP) rather than the conventional furnace process. The silicon dioxide (SiO2) film served as the tunnel oxide layer is formed on single wafer by utilizing the rapid thermal oxidation (RTO) method, and the tunnel oxide layer is annealed in-situ by utilizing the rapid thermal annealing (RTA) method to improve the quality of the tunnel oxide layer. Therefore, the time of forming the tunnel oxide layer can be decreased, and the thermal budget of the process can be reduced. Further, the uniformity of the tunnel oxide layer can be enhanced, and not only the contamination but also the consumed manpower and time resulted from changing chamber can be avoided.
Claims20
A method of forming a tunnel oxide layer, comprising:
- providing a substrate;
- providing a rapid heater to form a silicon dioxide (SiO2) film on the substrate, wherein the step of forming the silicon dioxide film on the substrate comprising:
- heating the substrate to make the substrate having a first reactive temperature;
- and
- injecting a first reactive gas to perform a thermal oxidation reaction, and the first reactive gas comprises hydrogen (H2) and oxygen (O2), wherein a flow ratio of hydrogen of the first reactive gas to the combination of oxygen of the first reactive gas and hydrogen of the first reactive gas is a predetermined value;
- and
- performing an annealing step on the silicon dioxide film on the substrate by using the rapid heater, wherein the annealing step is performed by controlling a parameter, and the parameter comprises:
- a second reactive temperature;
- a pressure;
- and
- a second reactive gas, wherein the second reactive gas comprises nitrogen (N2) and oxygen, and the flux of hydrogen of the second reactive gas is about 5 sccm and about 10 sccm, and the flux of oxygen of the second reactive gas is about 0.2 sccm and about 0.5 sccm.
A method of forming a tunnel oxide layer, comprising:
- providing a substrate;
- and
- providing a rapid heater to form a silicon dioxide film on the substrate, wherein the step of forming the silicon dioxide film on the substrate comprises:
- heating the substrate to make the substrate having a first reactive temperature;
- and
- injecting a first reactive gas to perform a thermal oxidation reaction, and the first reactive gas comprises hydrogen and oxygen, wherein a flow ratio of hydrogen of the first reactive gas to the combination of oxygen of the first reactive gas and hydrogen of the first reactive gas is a predetermined value;
- and
- performing an annealing step on the silicon dioxide film on the substrate by using the rapid heater, wherein the annealing step is performed by controlling a parameter, and the parameter comprises:
- a second reactive temperature between about 850° C. and about 1100° C.;
- a pressure between about 700 torr and about 760 torr;
- and
- a second reactive gas, wherein the second reactive gas comprises nitrogen and oxygen, and the flux of hydrogen of the second reactive gas is about 5 sccm and about 10 sccm, and the flux of oxygen of the second reactive gas is about 0.2 sccm and about 0.5 sccm.
A method of forming a tunnel oxide layer, comprising:
- providing a substrate;
- performing a rapid thermal oxidation step to form a silicon dioxide film on the substrate, wherein the rapid thermal oxidation step is performed by controlling a first parameter, and the first parameter comprises:
- a first reactive temperature between about 850° C. and about 1100° C.;
- a first pressure between about 5 torr and about 15 torr;
- and
- a first reactive gas, and the first reactive gas comprises hydrogen, oxygen, and nitrogen, wherein a flow ratio of hydrogen of the first reactive gas to the combination of oxygen of the first reactive gas and hydrogen of the first reactive gas is between about 1% and about 33%;
- and
- performing a rapid annealing step on the silicon dioxide film on the substrate, wherein the rapid annealing step is performed by controlling a second parameter, and the second parameter comprises:
- a second reactive temperature between about 850° C. and about 1100° C.;
- a second pressure between about 700 torr and about 760 torr;
- and
- a second reactive gas, wherein the second reactive gas comprises nitrogen and oxygen, and the flux of hydrogen of the second reactive gas is about 5 sccm and about 10 sccm, and the flux of oxygen of the second reactive gas is about 0.2 sccm and about 0.5 sccm.
Dependencies are inferred from the claim text.