Gas assisted method for applying resist stripper and gas-resist stripper combinations
AssigneeMicron Technology, Inc.
InventorTerry L. Gilton
Life of this patent
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Abstract
A method for moving resist stripper across the surface of a semiconductor substrate. The method includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.
Claims25
A method for removing photoresist from a semiconductor device structure, comprising:
- applying a quantity of ozonated water to the photoresist;
- and
- directing at least one gas other than ozone toward the semiconductor device structure so as to move said quantity of ozonated water across the photoresist.
A method for substantially continuously supplying a resist stripper including a gaseous component comprising ozone over a surface of a semiconductor device structure, comprising:
- applying the resist stripper to at least resist on the semiconductor device structure;
- and
- directing at least one gas other than ozone at least partially toward the resist stripper so as to decrease a thickness thereof.
Dependencies are inferred from the claim text.