Method of manufacturing semiconductor device capable of sensing dynamic quantity

A method of manufacturing a semiconductor device having a semiconductor substrate in which an insulation layer is layered on a first semiconductor layer and a second semiconductor layer is layered on the insulation layer, and a movable section formed in the second semiconductor layer and displaceable in response to a dynamic quantity to be applied, the method comprising the steps of:

• preparing the semiconductor substrate;
• forming a trench to demarcate the movable section within the prepared semiconductor substrate so that the trench reaches the insulation layer form a surface of the second semiconductor layer;
• forming the movable section by performing dry etching on the trench-formed semiconductor substrate, during which the dry etching the insulation layer located at a bottom of the trench is charged to force etching ions of the dry etching to impinge onto part of the second semiconductor layer located laterally to the bottom of the trench, thus the laterally located part of the second semiconductor layer being removed;
• and
• cleaning a region, which faces the insulation layer, of the movable section.

A method of manufacturing a semiconductor device having a semiconductor substrate in which an insulation layer is layered on a first semiconductor layer and a second semiconductor layer is layered on the insulation layer, and a movable section formed in the second semiconductor layer and displaceable in response to a dynamic quantity to be applied, the method comprising the steps of:

• preparing the semiconductor substrate;
• forming a trench to demarcate the movable section within the prepared semiconductor substrate so that the trench reaches the insulation layer form a surface of the second semiconductor layer;
• forming the movable section by performing dry etching on the trench-formed semiconductor substrate, during which the dry etching the insulation layer located at a bottom of the trench is charged to force etching ions of the dry etching to impinge onto part of the second semiconductor layer located laterally to the bottom of the trench, thus the laterally located part of the second semiconductor layer being removed;
• and
• roughing at least one of facing surfaces of both the movable section and the insulation layer, the facing surfaces are opposed to each other between the movable section and the insulation layer face.