Method of manufacturing gan-based p-type compound semiconductors and light emitting diodes
AssigneeKopin Corporation
InventorsJinlin Ye, Jyh-Chia Chen, Shirong Liao, Hong K. Choi, John C.C. Fan
Life of this patent
Estimating the term…
Abstract
Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.
Claims24
A method of activating a dopant in a compound semiconductor comprising the step of:
- irradiating the compound semiconductor with x-ray radiation.
A method of fabricating a p-type compound semiconductor comprising the steps of:
- growing a compound semiconductor by using reaction gas containing p-type impurity;
- and
- irradiating the compound semiconductor with x-ray radiation to activate the p-type impurity.
A method of fabricating compound semiconductor light emitting diode (LED) comprising the steps of:
- growing a compound semiconductor LED structure by an epitaxial growth process;
- and
- irradiating the LED with x-ray radiation to activate a p-type impurity.
Dependencies are inferred from the claim text.