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US 2002/0177248 A1Published application
Method for generating mid-infrared light
AssigneeMcCann & Associates, Inc.
InventorsPatrick J. McCann, Xiao-Ming Fang
Life of this patent
Estimating the term…
Abstract
A method for generating mid-infrared light by maintaining multiple quantum well (MQW) structures based on the alloy systems PbSrZ and PbSnZ, where Z is S, Se, or Te, at temperatures in the range of from about 5° C. to about 55° C. and pumping the MQW structures with a shorter wavelength laser pump beam or with an electrical current is provided.
Claims14
A method for generating mid-infrared light comprising:
- providing a multiple quantum well structure including a plurality, n, of quantum wells, where n is in the range of from about 10 to about 70 and wherein each of said quantum wells further includes a Pb1-ySryZ layer where Z is selected from the group consisting of S, Se, and Te, y is in the range of from about 0 atomic percent to about 15 atomic percent characterized by a layer thickness in the range of from about 2 nm to about 40 nm disposed between two Pb1-xSrxZ layers wherein x>y and x is in the range of from about 0 atomic percent to about 20 atomic percent and wherein each of said Pb1-xSrxZ layers is further characterized by a layer thickness in the range of from about 30 nm to 70 nm and a substrate;
- maintaining said multiple quantum well structure at a temperature in the range of from about 5° C. to about 55° C.;
- and pumping said multiple quantum well structure with a pump beam of laser light characterized by a pump laser light wavelength shorter than a mid-infrared light wavelength so that mid-infrared light is emitted from said multiple quantum well structure.
A method for generating mid-infrared light comprising:
- providing a multiple quantum well structure including a plurality, n, of quantum wells, where n is in the range of from about 10 to about 70 and wherein each of said quantum wells further includes a Pb1-ySnyZ layer where Z is selected from the group consisting of S, Se, and Te, y is in the range of from about 0 atomic percent to about 40 atomic percent characterized by a layer thickness in the range of from about 2 nm to about 40 nm disposed between two Pb1-xSnxZ layers wherein x<y and x is in the range of from about 0 atomic percent to about 20 atomic percent and wherein each of said Pb1-xSnxZ layers is further characterized by a layer thickness in the range of from about 30 nm to 70 nm and a substrate;
- maintaining said multiple quantum well structure at a temperature in the range of from about 5° C. to about 55° C.;
- and pumping said multiple quantum well structure with a pump beam of laser light characterized by a pump laser light wavelength shorter than a mid-infrared light wavelength so that mid-infrared light is emitted from said multiple quantum well structure.
A method for generating mid-infrared light comprising:
- providing a multiple quantum well structure including a plurality, n, of quantum wells, where n is in the range of from about 10 to about 70 and wherein each of said quantum wells further includes a Pb1-ySryZ layer where Z is selected from the group consisting of S, Se, and Te, y is in the range of from about 0 atomic percent to about 15 atomic percent characterized by a layer thickness in the range of from about 2 nm to about 40 nm disposed between two Pb1-xSrxZ layers wherein x>y and x is in the range of from about 0 atomic percent to about 20 atomic percent and wherein each of said Pb1-xSrxZ layers is further characterized by a layer thickness in the range of from about 30 nm to 70 nm and a substrate;
- placing said multiple quantum well structure between an n-type electrical contact layer and a p-type electrical contact layer;
- maintaining said multiple quantum well structure at a temperature in the range of from about 5° C. to about 55° C.;
- and pumping said multiple quantum well structure with a pump electrical current so that mid-infrared light is emitted from said multiple quantum well structure.
1 more element
A method for generating mid-infrared light comprising:
- providing a multiple quantum well structure including a plurality, n, of quantum wells, where n is in the range of from about 10 to about 70 and wherein each of said quantum wells further includes a Pb1-ySnyZ layer where Z is selected from the group consisting of S, Se, and Te, y is in the range of from about 0 atomic percent to about 40 atomic percent characterized by a layer thickness in the range of from about 2 nm to about 40 nm disposed between two Pb1-xSnxZ layers wherein x<y and x is in the range of from about 0 atomic percent to about 20 atomic percent and wherein each of said Pb1-xSnxZ layers is further characterized by a layer thickness in the range of from about 30 nm to 70 nm and a substrate;
- placing said multiple quantum well structure between an n-type electrical contact layer and a p-type electrical contact layer;
- maintaining said multiple quantum well structure at a temperature in the range of from about 5° C. to about 55° C.;
- and pumping said multiple quantum well structure with a pump electrical current so that mid-infrared light is emitted from said multiple quantum well structure.
1 more element
Dependencies are inferred from the claim text.