High-power surface emitting laser and fabrication methods thereof
OwnerZhijiang Hang, Victor Lazarevinventors
Life of this patent
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Abstract
High powered lasers of substantially any wavelength produced by certain processes including the process of providing a structure comprising a substrate with an epi structure thereon comprising a gain region with multiple quantum wells, a mirror stack coupled to the gain region, and a conductive layer coupled to the mirror stack; dividing the conductive layer into a conductive, central area and one or more dielectric, peripheral areas; attaching a conductive plate to the conductive layer; thinning the substrate to improve the passage of light therethrough to produce a substrate remnant; and attaching an electrode to the substrate remnant.
Claims39
A laser produced by the process of:
- providing a structure comprising a substrate with an epi structure thereon comprising a gain region with multiple quantum wells, a mirror stack coupled to the gain region, and a conductive layer coupled to the mirror stack;
- dividing the conductive layer into a conductive, central area and one or more dielectric, peripheral areas;
- attaching a conductive plate to the conductive layer;
- thinning the substrate to improve the passage of light therethrough to produce a substrate remnant;
- and
- attaching an electrode to the substrate remnant;
- whereby the conductive plate can act as a mechanical support for the structure, as an electrode, and as a means for dissipating heat.
A laser produced by the process of:
- providing a structure comprising a substrate with an epi structure thereon comprising an etch-stop layer, a mirror stack coupled to the etch-stop layer, and a gain region with multiple quantum wells coupled to the mirror stack;
- depositing an electrode on the gain region;
- attaching a support layer to the electrode;
- thinning the substrate to improve the passage of light therethrough to produce a substrate remnant;
- making a hole in the substrate remnant;
- and
- depositing conductive material into the hole in the substrate remnant.
A laser produced by the process of:
- providing a structure comprising a substrate with an epi structure thereon comprising a mirror stack coupled to the substrate, and a gain region with multiple quantum wells coupled to the mirror stack;
- removing the substrate;
- replacing the substrate with a plate of semiconductor material;
- depositing an electrode on the plate of semiconductor material;
- depositing an electrode on the gain region.
A laser produced by the process of:
- providing a structure comprising a substrate with an epi structure thereon comprising a conductive layer coupled to the substrate, a mirror stack coupled to the conductive layer, and a gain region with multiple quantum wells coupled to the mirror stack;
- securing a wafer of semiconductor material to the gain region of the structure;
- thinning the substrate to produce a substrate remnant;
- dividing the conductive layer into a conductive, central area and one or more dielectric, peripheral areas;
- depositing an electrode on the substrate remnant;
- and
- depositing an electrode on the wafer of semiconductor material.
A laser produced by the process of:
- providing a structure comprising a substrate with an epi structure thereon comprising a release layer, a gain region with multiple quantum wells coupled to the release layer, a mirror stack coupled to the gain region, and a conductive layer coupled to the mirror stack;
- dividing the conductive layer into a conductive, central area and one or more dielectric, peripheral areas;
- affixing a support layer to the conductive layer;
- removing the substrate and the release layer;
- replacing the substrate with a replacement substrate;
- removing the support layer;
- depositing an electrode on the conductive layer;
- and
- depositing an electrode on the replacement substrate.
Dependencies are inferred from the claim text.