Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
AssigneeFujitsu Limited
InventorsKatsuyoshi Matsuura, Mari Tani, Yoshimasa Horii, Fan Chu, Glen R. Fox, Brian Eastep
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Abstract
A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.
Claims20
A method of fabricating a semiconductor device having a ferroelectric capacitor, comprising the steps of:
- forming an active device element on a substrate;
- forming an insulation film over said substrate to cover said active device element;
- forming a lower electrode layer of said ferroelectric capacitor over said insulation film;
- forming a ferroelectric film on said lower electrode layer as a capacitor insulation film of said ferroelectric capacitor;
- crystallizing said ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas;
- and
- forming an upper electrode layer on said ferroelectric film.
A method of fabricating a semiconductor device having a ferroelectric capacitor, comprising the steps of:
- forming an active device element on a substrate;
- forming an insulation film over said substrate to cover said active device element;
- forming a lower electrode layer of said ferroelectric capacitor over said insulation film;
- forming a ferroelectric film on said lower electrode layer as a capacitor insulation film of said ferroelectric capacitor;
- crystallizing said ferroelectric film by applying a thermal annealing process in an atmosphere of an oxidizing gas under a reduced total pressure smaller than an atmospheric pressure;
- and
- forming an upper electrode layer on said ferroelectric film.
A method of fabricating a semiconductor device having a ferroelectric capacitor, comprising the steps of:
- forming an active device element on a substrate;
- forming an insulation film over said substrate to cover said active device element;
- forming a lower electrode layer of said ferroelectric capacitor over said insulation film, said lower electrode layer including a layer part containing Ti atoms;
- forming a ferroelectric film on said lower electrode layer as a capacitor insulation film of said ferroelectric capacitor;
- crystallizing said ferroelectric film by applying a thermal annealing process in an atmosphere of an oxidizing gas;
- and
- forming an upper electrode layer on said ferroelectric film,
- wherein said step of crystallizing said ferroelectric film is conducted by supplying O2 controlled to cause an oxidation in said Ti atoms reached a surface of said lower electrode from said layer part containing Ti atoms.
A semiconductor device, comprising:
- a substrate;
- an active device element formed on said substrate;
- an insulation film provided over said substrate to cover said active device element;
- a lower electrode provided over said insulation film;
- a ferroelectric film provided on said lower electrode, said ferroelectric film having a columnar microstructure extending from an interface between said lower electrode and said ferroelectric film in a direction substantially perpendicular to a principal surface of said lower electrode, said ferroelectric film essentially consisting of crystal grains having a generally uniform grain diameter of less than about 200 nm;
- and
- an upper electrode provided on said ferroelectric film.
Dependencies are inferred from the claim text.