Anti-charging layer for beam lithography and mask fabrication
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsElizabeth Dobisz, Walter J. Dressick, Susan L. Brandow, Mu-San Chen
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Abstract
This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.
Claims32
A method for forming anti-charging layers for beam lithography comprising:
- (a) applying a self-assembled monolayer having metal ligand sites to a substrate;
- (b) binding a metal deposit to said ligand sites of said metal ligating self-assembled monolayer;
- and
- (c) applying a resist to said metal deposit.
A method for forming an anti-charging layer for beam lithography comprising:
- (a) applying a resist to a substrate;
- (b) applying a self-assembled monolayer having metal ligand sites to said resist;
- and
- (c) binding a metal deposit to said ligand sites of said self-assembled monolayer having metal ligand sites.
A method for forming an anti-charging layer for beam lithography comprising:
- (a) applying a self-assembled monolayer having metal ligand sites to a substrate;
- (b) binding a metal deposit to said ligand sites of said self-assembled monolayer having metal ligand sites;
- (c) applying a second self-assembled monolayer having metal ligand sites to said metal;
- and
- (d) binding a second metal deposit to said second self-assembled monolayer having metal ligand sites.
A method for conducting beam lithography comprising:
- (a) applying a self-assembled monolayer having metal ligand sites to a resist;
- (b) binding a metal deposit to said self-assembled monolayer having metal ligand sites;
- (c) forming an anti-charging layer;
- (d) exposing said resist with a beam;
- and
- (e) developing said resist.
An improved resist layer for beam lithography, comprising:
- (a) a layer of polymer resist, disposed over a wafer for lithographic patterning;
- (b) a metal deposit for conductively dissipating charge, in contact with said polymer resist layer, either directly or through a self-assembled monolayer;
- and
- (c) a ground connect, for connecting said metal deposit to ground.
Dependencies are inferred from the claim text.