Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device
AssigneeFujitsu Limited
InventorsMiwa Kozawa, Koji Nozaki, Keiji Watanabe, Ei Yano
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Abstract
A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1): 1 is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin, is disclosed.
Claims20
A negative resist composition containing an alkaline-soluble resin as a base material, in which an oxetane structure represented by the following formula (1):
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- is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin.
A method for forming a negative resist pattern comprising the steps of:
- applying a resist composition on a substrate to form a resist film, said resist composition containing an alkaline-soluble resin as a base material, an oxetane structure represented by the following formula (1):
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- is contained in a structure of the alkaline-soluble resin or in a structure of a compound used in combination with the alkaline-soluble resin;
- exposing the resist film to a radiation used for imaging a pattern;
- developing said exposed resist film with a basic aqueous solution to form the negative resist pattern.
A method for fabricating a semiconductor device comprising the steps of:
- applying a resist composition on a substrate to form-a resist film, the resist composition containing an alkaline-soluble resin as a base material, an oxetane structure represented by the following formula (1):
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- is contained in the structure of said alkaline-soluble resin or in the structure of a compound used in combination with the alkaline-soluble resin;
- exposing said resist film to a radiation for imaging a pattern;
- developing the exposed resist film with a basic aqueous solution to form a negative resist pattern.
A method for forming a negative resist pattern comprising the steps of:
- applying a first resist composition on a substrate to form a lower layer resist film;
- applying a second resist composition on said lower layer resist film to form an upper layer resist film, said second resist composition containing an alkaline-soluble resin as a base material, an oxetane structure represented by the following formula (1):
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- is contained in the structure of said alkaline-soluble resin or in the structure of a compound used in combination with said alkaline-soluble resin;
- exposing said upper layer resist film to radiation for imaging a pattern;
- developing the exposed upper layer resist film with a basic aqueous solution to form a resist pattern;
- etching said lower layer resist film by using said resist pattern as a mask to form a negative resist pattern by said lower resist film and said upper resist film.
Dependencies are inferred from the claim text.