Charged particle processing for forming pattern boundaries at a uniform thickness
AssigneeSII NanoTechnology Inc.
InventorsRyoji Hagiwara, Tomokazu Kozakai
Life of this patent
Estimating the term…
Abstract
In the processing method of the present invention, there is implemented irradiation with a charged particle beam in such a manner that, when executing processing in a uniform manner, when deposition processing or etching processing of a prescribed pattern is carried out using a charged particle beam apparatus, a region of the pattern to be processed is divided up into microscopic regions corresponding to the diameter of the beam, and regulation is performed by scanning circuits etc. with processing proceeding simultaneously for a plurality of patterns within the scanning region in such a manner that the dose amount for each microscopic region becomes equal.
Claims6
A processing method for implementing irradiation with a charged particle beam in such a manner that, when deposition processing or etching processing of a prescribed pattern is carried out using a charged particle beam apparatus, a region of the pattern to be processed is divided up into microscopic regions corresponding to the diameter of the beam, and the dose amount for each microscopic region becomes equal.
A scanning type charged particle beam apparatus comprising:
- means for dividing a pattern to be processed by scanning the pattern with a beam into microscopic regions corresponding to the diameter of the beam and obtaining irradiation amount distribution information in the divided microscopic regions;
- and means for regulating processing in such a manner that the amount of irradiation of boundary regions becomes the same as the amount of irradiation of central regions based on the irradiation amount distribution information.
Dependencies are inferred from the claim text.