Exposure method and apparatus
AssigneeCanon Kabushiki Kaisha
InventorsKenji Saitoh, Akiyoshi Suzuki, Kenji Yamazoe
Life of this patent
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Abstract
An exposure method comprising the steps of forming onto a mask that arranges a pattern of a contact hole and a plurality of patterns each being smaller than the contact hole pattern, and illuminating the mask using plural kinds of light so as to resolve the desired pattern without the smaller patterns on a target via a projection optical system.
Claims35
An exposure method comprising the steps of:
- providing a mask that arranges a pattern of a contact hole and a plurality of patterns each being smaller than the contact hole pattern;
- and
- illuminating the mask using plural kinds of light so as to resolve the contact hole pattern without the smaller patterns on a target via a projection optical system.
An exposure method comprising the steps of:
- forming onto a mask that arranges a pattern of a contact hole and a plurality of patterns each being smaller than the contact hole pattern;
- and
- illuminating the mask using light forming an effective light source that has a non-circular dark portion at a center portion thereof, so as to resolve the contact hole pattern without the smaller patterns on a target via a projection optical system.
An exposure apparatus comprising a mechanism for adjusting a ratio of illumination light volume between first illumination and second illumination, the first illumination having an effective light source having crossed four figures corresponding to a longitudinal and transverse axes of an array of contact hole, and the second illumination having another effective light source.
A mask that two-dimensionally arranges a pattern of a contact hole and plural kinds of auxiliary patterns each being smaller than the contact hole pattern, wherein a size of the auxiliary pattern adjacent to the contact hole pattern is made smaller than that of another auxiliary pattern.
A mask that two-dimensionally arranges a desired pattern of contact holes and an auxiliary pattern smaller than the desired pattern, wherein said mask is adapted to a phase shift mask that forms the two-dimensionally arranged the desired pattern by setting phases of 0 and 180 degrees checkerwise.
A projection exposure method comprising the steps of:
- providing a mask that arranges a pattern of a contact hole and a plurality of patterns each being smaller than the contact hole pattern;
- and
- illuminating the mask with fist illumination for resolving the contact hole pattern, and second illumination for preventing a false resolution caused by the smaller patterns and the first illumination.
Dependencies are inferred from the claim text.