Method of improving the adhesion of copper
AssigneeApplied Materials, Inc.
InventorTushar Mandrekar
Life of this patent
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Abstract
The present invention provides a method of improving the adhesion of a copper layer to a barrier layer on a substrate. After deposition of a barrier layer, such as TiN, an amorphous silicon layer is deposited by striking a plasma over the substrate using a silicon source gas, such as silane, and an inert gas, such as argon (Ar). A Cu layer is deposited on the amorphous silicon. In another aspect of the invention, a TiSiN layer is deposited using a silicon source gas, such as silane, and a titanium source gas, such as TDMAT, during the deposition of the TiN barrier layer.
Claims25
A method for depositing copper on a substrate, comprising:
- positioning a substrate in a processing chamber;
- depositing a barrier layer from a first processing gas mixture containing a source of titanium, nitrogen, and silicon onto the substrate for a first predetermined time in the processing chamber;
- and
- depositing a layer of copper onto the barrier layer from a second processing gas mixture containing a copper source for a second predetermined time.
A method for depositing copper on a substrate, comprising:
- depositing a TiSiN layer on a substrate in a processing chamber for a first period of time from a first processing gas mixture containing a source of titanium, nitrogen, and silicon;
- and
- depositing a copper layer onto the TiSiN layer for a second period of time from a second processing gas mixture.
Dependencies are inferred from the claim text.