Semiconductor light emitting device and manufacturing method thereof

A surface emitting type semiconductor laser of a vertical cavity type, comprising:

• a semiconductor substrate;
• a lower multi-layer reflection film formed on said semiconductor substrate;
• a double hetero structure portion which is formed on said lower multi-layer reflection film and in which an active layer with small band gap is sandwiched between semiconductor layers with larger band gap than that of said active layer;
• and
• an upper multi-layer reflection film formed on said double hetero structure portion,
• wherein said upper multi-layer reflection film and said double hetero structure portion on the periphery of a certain area serving as a current injection area of said double hetero structure portion are removed by etching, a heat radiating film which has light reflecting property and superior heat conductivity than that of said double hetero structure portion is formed at a side wall exposed by etching, and laser light exits from an upper surface side of said upper multi-layer reflection film.

A method of manufacturing a semiconductor light emitting device comprising the steps of:

• laminating semiconductor layers on a semiconductor substrate so as to form a double hetero structure portion in which an active layer with small band gap is sandwiched between semiconductor layers with larger band gap than that of said active layer;
• etching a part of said laminated semiconductor layers so as to expose a side wall of said double hetero structure portion;
• and
• applying a heat radiating film which has light reflecting property and superior heat conductivity than that of said double hetero structure portion to said exposed side walls of the double hetero structure portion.

A method of manufacturing a surface light emitting type semiconductor laser, comprising the steps of:

• (a) growing, on a first conductive type semiconductor substrate, a lower multi-layer reflection film which is formed by laminating first conductive type semiconductor layers;
• (b) growing, on said lower multi-layer reflection film, a double hetero structure portion formed of a first conductive type lower spacer layer, an active layer made of semiconductor having smaller band gap than that of the spacer layer and a second conductive type upper spacer layer made of semiconductor having larger band gap than that of the active layer;
• (c) growing, on said double hetero structure portion, an upper multi-layer reflection film formed by laminating the second conductive type semiconductor layers;
• (d) removing said upper multi-layer reflection film and said double hetero structure portion on the periphery of the current injection area by etching;
• (e) exposing only side wall exposed by said etching and applying a metallic film on said exposed surface by a plating method;
• and
• (f) forming said applied metallic film into a metal oxide film by an oxidation treatment.