Semiconductor laser device, semiconductor laser module, and raman amplifier using the device or module
OwnerYoung Duk Yooninventor
Life of this patent
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Abstract
In a semiconductor laser device, a transmission film having a low reflectivity is provided on a laser beam radiation end surface side of a laser element having an active layer therein, and a dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm is provided on a laser beam reflection end surface side as a laser beam reflection film. As a result, the laser beam oscillated from the laser element is wavelength-selected by the laser beam reflection film and is emitted from the transmission film.
Claims21
A semiconductor laser device in which an optical resonator is formed by providing a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein, and a reflection film having a high reflectivity on a laser beam reflection end surface side, and
- said reflection film is formed by a dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm.
A semiconductor laser device comprising:
- a laser element body provided with a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein;
- and
- a reflection film which is physically independent of said laser element body, and is formed by a high-reflectivity dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm, to function as a reflection end surface of an optical resonator,
- wherein an optical resonator is formed such that the active layer is interposed between said transmission film and said reflection film.
A semiconductor laser module comprising:
- a semiconductor laser device in which an optical resonator is formed by providing a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein, and a reflection film having a high reflectivity on a laser beam reflection end surface side, and said reflection film is formed by a dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm;
- an optical fiber which wave-guides the laser beam emitted from said semiconductor laser device to the outside;
- an optical coupling lens system which optically couples said semiconductor laser device and said optical fiber;
- a temperature control unit which controls the temperature of said semiconductor laser device;
- and
- an isolator arranged in the optical coupling lens system, to control the incidence of a reflected return light from the optical fiber side.
A semiconductor laser module comprising:
- a semiconductor laser device comprising a laser element body provided with a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein, and a reflection film which is physically independent of said laser element body, and is formed by a high-reflectivity dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm, to function as a reflection end surface of an optical resonator, wherein an optical resonator is formed such that the active layer is interposed between said transmission film and said reflection film;
- an optical fiber which wave-guides the laser beam emitted from said semiconductor laser device to the outside;
- an optical coupling lens system which optically couples said semiconductor laser device and said optical fiber;
- a temperature control unit which controls the temperature of said semiconductor laser device;
- and
- an isolator arranged in the optical coupling lens system, to control the incidence of a reflected return light from the optical fiber side.
A Raman amplifier using, as an excitation light source for broadband Raman amplification, a semiconductor laser device in which an optical resonator is formed by providing a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein, and a reflection film having a high reflectivity on a laser beam reflection end surface side, and said reflection film is formed by a dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm.
A Raman amplifier using, as an excitation light source for broadband Raman amplification, a semiconductor laser device comprising a laser element body provided with a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein, and a reflection film which is physically independent of said laser element body, and is formed by a high-reflectivity dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm, to function as a reflection end surface of an optical resonator, wherein the optical resonator is formed such that the active layer is interposed between said transmission film and said reflection film.
A Raman amplifier using, as an excitation light source for broadband Raman amplification, a semiconductor laser module comprising:
- a semiconductor laser device in which an optical resonator is formed by providing a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein, and a reflection film having a high reflectivity on a laser beam reflection end surface side, and said reflection film is formed by a dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm;
- an optical fiber which wave-guides the laser beam emitted from said semiconductor laser device to the outside;
- an optical coupling lens system which optically couples said semiconductor laser device and said optical fiber;
- a temperature control unit which controls the temperature of said semiconductor laser device;
- and
- an isolator arranged in the optical coupling lens system, to control the incidence of a reflected return light from the optical fiber side.
A Raman amplifier using, as an excitation light source for broadband Raman amplification, a semiconductor laser module comprising:
- a semiconductor laser device comprising a laser element body provided with a transmission film having a low reflectivity on a laser beam radiation end surface side of a laser element having an active layer therein, and a reflection film which is physically independent of said laser element body, and is formed by a high-reflectivity dielectric multilayer film having a reflection wavelength bandwidth set to be not larger than 10 nm, to function as a reflection end surface of an optical resonator, wherein an optical resonator is formed such that the active layer is interposed between said transmission film and said reflection film;
- an optical fiber which wave-guides the laser beam emitted from said semiconductor laser device to the outside;
- an optical coupling lens system which optically couples said semiconductor laser device and said optical fiber;
- a temperature control unit which controls the temperature of said semiconductor laser device;
- and
- an isolator arranged in the optical coupling lens system, to control the incidence of a reflected return light from the optical fiber side.
Dependencies are inferred from the claim text.