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AssigneeHitachi, Ltd.
InventorsMasahiko Kondow, Takeshi Kitatani, Makoto Kudo
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In a semiconductor laser for emitting light perpendicular to substrate crystal, including, on the substrate crystal, an active layer for generating light, a cavity structure sandwiching the active layer by reflecting mirrors so as to obtain a laser beam from the light generated from the active layer, and a regrown semiconductor layer between the active layer and one of the reflecting mirrors, a regrown interface or a face very close to the regrown interface is formed by a thin film containing dopants of high concentration. With the configuration, an adverse influence of a contamination deposit on the regrown interface is eliminated by delta-doping the regrown interface. The cost is reduced and device resistance is also reduced to 50 Ω or less. Thus, an edge emitting laser (VCSEL) for realizing a optical module achieving a high speed characteristic over 10 Gb/s is obtained.
A semiconductor laser comprising, on substrate crystal, an active layer for generating light and a cavity structure for obtaining a laser beam from the light generated from said active layer,
A vertical cavity surface emitting semiconductor laser for emitting light perpendicular to substrate crystal, comprising, on said substrate crystal, an active layer for generating light, a cavity structure in which the active layer is sandwiched by upper and lower reflecting mirrors to obtain a laser beam from the light generated from said active layer, and a regrown semiconductor layer provided between said active layer and one of said reflecting mirrors,
A method of fabricating a semiconductor laser for obtaining a laser beam from light generated by an active layer which generates light and is provided on substrate crystal, comprising
A method of fabricating a semiconductor laser for generating light perpendicular to substrate crystal, having, on said substrate crystal, an active layer for generating light and a cavity structure sandwiching said active layer to obtain a laser beam from the light generated from said active layer, comprising:
Dependencies are inferred from the claim text.